As we know that, NAND flash is the leading nonvolatile memory (NVM) technology using silicon, presumed for higher retention and high-density at less-cost. The operation of NAND flash transistor is due to the charge storage on the floating gate or the dielectric gate of transistor geometry. Similar geometry can be used in organic electronics, since charge carriers can be injected from a semiconductor into the charge-storing gate dielectrics. Charge trapping characteristics is of fundamental interest by rationally incorporating the optimized charge trapping sites in the dielectrics. The transistor-based NVM concepts have a geometry is similar to the conventional transistor, which is benefit for entrenching memory in logic, thereby fulfilling one of the anticipated necessities of an effective organics-based NVM technology. The most versatile type of memory behaviours is write-read-rewrite operation by the programmable voltage or current values, interpreting the electrically controllable nonvolatile memory behavior. The resistance ratio (ON/OFF ratio) between high resistance and low resistance states can be measured at certain reading voltages. The retention property of NVM devices demonstrates their viability for NVM applications. An expected retention criterion for NVM devices is more than ten years at room temperature and atmospheric conditions.